Toshiba and ROHM announced a collaborative effort endorsed by Japan’s Ministry of Economy, Trade and Industry (METI) to escalate silicon and SiC power device manufacturing. This partnership responds to escalating demand across electronic applications, notably in carbon-neutral initiatives, electric vehicles, and industry.

ROHM anticipates wide adoption of its latest SiC MOSFETs in electric vehicles and industry, investing significantly to augment SiC production capacity and meet market demands. Simultaneously, Toshiba, a stalwart in silicon power devices, accelerates investments after launching a 300mm wafer line last year. It aims to expand SiC power devices for automotive, power transmission, and distribution applications, leveraging its railway vehicle expertise.

The collaboration’s support, up to JPY129.4 billion, of the total JPY388.3 billion investment, illustrates their commitment. ROHM invests JPY289.2 billion in SiC power devices and SiC wafer production at LAPIS Semiconductor Co Ltd’s Miyazaki Plant No.2, while Toshiba commits JPY99.1 billion to Kaga Toshiba Electronics Corp’s silicon power device manufacturing.

Beyond bolstering production, this collaboration aims to fortify Japan’s semiconductor supply chains, enhancing global competitiveness and resilience in semiconductor manufacturing.