SOI wafer

Silicon on Insulator (SOI) represents a breakthrough in semiconductor wafer technology, outperforming traditional bulk silicon methods. By introducing a thin insulating layer, typically silicon oxide, between a layer of silicon and the silicon substrate, SOI significantly reduces junction capacitance. This results in dynamic devices that are up to 15 percent faster and consume 20 percent less power compared to conventional bulk complementary metal-oxide semiconductor (CMOS)-based chips.

The impact of SOI extends across diverse industries due to its ability to enhance electronic device efficiency. It finds applications in high-performance computing, telecommunications, automotive, and the Internet of Things (IoT). SOI wafers are integral to advancing cutting-edge technologies, providing remarkable speed and power-saving capabilities.

At D&X, we offer high-quality SOI wafers with different thicknesses for the Device Layer, BOX Layer, and Handle Layer. While our strong production line is geared towards 8-inch wafers, we can also process smaller diameters with customized specifications. Our services are flexible, starting from a minimum quantity of 1 piece, making them suitable for your research projects or during the R&D phase.

Swift Delivery

Small Quantities Welcome

High Quality

01. CAPABILITY

we are able to provide customized solutions for your specific project needs. Refer to our Stock List for currently available specifications.

Silicon on Insulator (SOI) Wafer

Device Layer -TOPMin.Max.
Crystal Growth MethodCZ,FZ
Diameter2″8″
Thickness0.05μm>300μm
Tolerance±5%
Crystal Orientation(100),(110),(111)
Type/DopantP/Boron,N/Phosphorus,Intrinsic
Resistivity0.001 ohm-cm>20,000 ohm-cm
Front SurfacePolished
Buried Oxide -BOX layerMin.Max.
Thickness0.1μm3μm
Tolerance±5%
Handle LayerMin.Max.
Crystal Growth MethodCZ,FZ
Diameter2″8″
Thickness200μm750μm
Tolerance±5%
Crystal Orientation(100),(110),(111)
Type/DopantP/Boron,N/Phosphorus,Intrinsic
Resistivity0.001 ohm-cm>20,000 ohm-cm
Back SurfaceEtched or Polished with Oxide
Overall Wafer CharacteristicsMin.Max.
TTV<5μm
BOW<20μm
Lead time9-12 weeks (On Average)