Platinum (Pt) over/TiO2/over SiO2/over polished Si wafer
Orientation of Silicon: <100>
Thickness of Silicon Wafer: 400-600 μm
Diameter: 4 inches
Resistivity: 1-20 ohms-cm
Thickness of Platinum: 200 ± 20 nm
TiO2 Buffer Layer Thickness: 40 ± 10 nm
Oxide Layer Thickness: 500 nm ± 30 nm
Roughness: <0.5 nm Temperature Stability of Pt Layer: Pt layer should remain intact up to 650°C Surface: Single-side polished