Material: undoped Si
GaAs:-
Orientation: 100
Thickness: 480
Surface: ME
Resistivity: n-type 8.58E7-1.43E8
Mobil cm2/Vs: 6.415-6.940
EPD/cm2: <8.2E4

Material: n-type
GaAs: Si
Orientation: 100
Thickness: 620
Surface: EE
Resistivity: 0.00349-0.00851
Nc a/cm3: (2.32-8.18)E17
Mobil cm2/Vs: 2,189-3,131
EPD/cm2: <25,000

Material: Si
GaAs: Cr
Orientation: 100
Thickness: 625
Surface: ME
Resistivity: 1.58E8-1.93E8
Mobil cm2/Vs: 6,081-6,130
EPD/cm2: <8.04E4

Material: n-type
GaAs: Te
Orientation: 100
Thickness: 750
Surface: MM
Resistivity: 8.09E3
Nc a/cm3: (3.6-18.3)E16
Mobil cm2/Vs: 4,218

Material: undoped SI
GaAs: –
Orientation: 100
Thickness: 625
Surface: MM
Resistivity: n-type

Materials: GaP
Type: N
Orientation: [100]
Thickness: 265±10
Surface: MM
Resistivity: 4.8E3-1.4E5
Nca/cm3: (0.3-9.0)E12
Mobil cm2/Vs: 145
EPD/cm2: <3E4

Materials: GaP
Type: N
Orientation: [111B]±0.5
Thickness: 400
Surface: ME
Resistivity: 0.09-022
Nca/cm3: (2-4.6)E16
Mobil cm2/Vs: 145-155
EPD/cm2: <8E4

Materials: GaP
Type: N
Orientation: [100-10 towards[110]±1
Thickness: 302
Surface: ME
Resistivity: 0.16
Nca/cm3: 4.79E17
Mobil cm2/Vs: 112
EPD/cm2: <5E4

Thickness: 490±30µm
Typ N
Plane Orientation: Ga-Face c-plane
TTV: ≤ 15
Warp: ≤20
Bow: -10µm -5µm

GaN film thickness: 4µm, 10-25µm
Oriented Plane: C-plane (0001)±0.5
Type: N-type (Si)
Orientation: 1-100
Flat length: 30±1 mm
Resistivity: <0.05 ohm-cm Dislocation Density: 5 x 10⁸ cm2 Substrate Structure: GaN/Sapphire Wafer (0001) Surface Effective Area: More than 90% Surface finish: CMP finish/fine grinding

Thickness: 330±30
Orientation: 0001
TTV: ≤20
Warp: ≤25

Material: undoped GaN
Orientation: [0001]±1
Thickness: 480±50
Surface: ME
Resistivity: n-type<0.5 EPD/cm2: <5E6

GaN film thickness: 4µm, 10-25µm
Oriented Plane: C-plane (0001)±0.5
Type: N-type (Undoped)
Orientation: 1-100
Flat length: 30±1 mm
Resistivity: <0.05 ohm-cm Dislocation Density: 5 x 10⁸ cm2 Substrate Structure: GaN/Sapphire Wafer (0001) Surface Effective Area: More than 90% Surface finish: CMP finish/fine grinding

Materials: InP
Orientation: [100]
Thickness: 400
Surface: ME
Resistivity: 0.0010-0.0011
Nca/cm3: (3.8-4.3)E18
Mobil cm2/Vs: 1417-1490
EPD/cm2: <2E4

Materials: InP
Orientation: [100]±0.2
Thickness: 625
Surface: ME
Resistivity: >1E7
EPD/cm2: <3E4