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D&X 專注於碳化矽晶圓（SiC），為確保每個客戶的訂單順利展開，D&X確保了多條 SiC 的生產線，並利用一直以來積累的專業知識滿足客戶特定的需求。
D&X 對於能夠滿足客戶需求的自信來自於多年來的業界經驗。通過過往的經驗和對各種先進材料應用的專業知識，D&X 在半導體行業中建立了可靠合作夥伴的地位，並一直處於提供最先進半導體解決方案的領先地位。
有關當前可用規格的詳細信息，請參閱 D&X 的庫存清單。
化合物半導體
迅速交貨
歡迎小量訂購
高品質
01. 化合物半導體
D&X 對於能夠滿足客戶需求的自信來自於多年來的業界經驗。通過過往的經驗和對各種先進材料應用的專業知識，D&X 在半導體行業中建立了可靠合作夥伴的地位，並一直處於提供最先進半導體解決方案的領先地位。
Silicon Carbide (SiC) Wafer Specifications
| Grade | Zero MPD | Production | Research Grade | Dummy Grade | |
| Diameter | 50.8 ±0.38 mm // 76.2 ±0.38 mm // 100+0.5 mm // 150±0.25mm | ||||
|
Thickness
|
4H-N | 350μm ± 25μm | |||
|
Thickness
|
4H-SI | 500μm ± 25μm | |||
| Wafer Crystal Orientation | Off axis:4.0° toward 1120! ± 0.5° for 4H-N On axis: <0001> ± 0. 5° for 4H-SI | ||||
| Micropipe Density | <1cm-2 | <5cm-2 | <15cm-2 | <50cm-2 | |
|
Resistivity
|
4H-N | 0.015 ~ 0.028ohm-cm | |||
|
Resistivity
|
6H-N | 0.02 ~ 0.1ohm-cm | |||
|
Resistivity
|
4/6H-SI | >1E5Q-cm (90%) | >1E5Q-cm | ||
| Primary Flat | {10-10} ± 5.0° | ||||
| Primary Flat Length | 15.9 mm ± 1.7 mm // 22.2 mm ± 3.2 mm // 32.5 mm ± 2.0 mm // 47.5 mm ± 2.5mm | ||||
| Secondary Flat Length | 8.0 mm ± 1.7 mm // 11.2 mm ± 1.5 mm, 18.0mm ± 2.0 mm // —– | ||||
| Secondary Flat Orientation | Silicon face up: 90° CW from Prime flat ± 5.0° | ||||
Indium Phosphide (InP) Specifications
| Growth Method | VGF | ||
| Type/Dopant | Undoped // N/S/Sn // P/Zn | ||
| Size | 2inch | 3inch | 4inch |
| Diameter (mm) | 50.8±0.3 | 76.2±0.3 | 100±0.3 |
| Thickness (um) | 350±25 | 625±25 | 625±25 |
| OF(mm) | 16±2 | 22±2 | 32.5±2 |
| IF(mm) | 8±2 | 12±2 | 18±2 |
| Orientation | (100)±0.5 | ||
| TTV(um) | ≦10 | ≦15 | ≦15 |
| Bow(um) | ≦15 | ≦15 | ≦15 |
| Wrap(um) | ≦15 | ≦15 | ≦15 |
| Surface | Polished/Etched | ||
| Epi-ready | Yes | ||
Gallium Arsenide (GaAs) Wafer Specification
| Diamter | 50 ~ 150mm ± 0.25mm(2″ // 3″ // 4″ // 6″) |
| Material | Single Crystal Gallium Arsenide |
| Growth Method | VGF // LEC Grown |
| Crystal Orientation | <100> // <111> |
| Crystal Orientation | α 0 ± β 0, off angle α and accuracy β upon request |
| Dopant | Undoped // Zn // Si // Te |
| Thickness | 350 ± 25um // 550 ± 25um // 625 ± 25um |
| Mobility | 1500 ~ 3000 // 3000 ~ 5000 cm2 / V·sec |
| Primary Flat | <0-1-1> ± 0.5deg, 16 ±1.0mm // 22±1.0mm // 32.5±1.0mm |
| Secondary Flat | <0-1-1> ± 5.0 deg, 8 ±1.0mm // 11±1.0mm // 18±1.0mm |
| Front-side | Polished in Epi-ready Prime grade |
| Back-side | Polished / Lapping or Etched |
| Epi-ready | Yes |
Germanium (Ge) Wafer Specifications
| Diameter | 2 inch ~ 6 inch | ||
| Thickness | 175um // 200um / 400um // 500um // 625um | ||
| Type/Dopant | Undoped | N/Sb | P/Ga |
| Resistivity (Ω・cm) | >30 | >0.005 | >0.005-0.04 |
| EP(/cm2) | <3000 | <3000 | 0 |
| Orientation | <100> // <111> | ||
| TTV | ≤25μm | ||
| Bow | ≤25μm | ||
| Wrap | ≤25μm | ||
| Surface | E/E // P/E // P/D | ||
| Epi-ready | Yes | ||
Indium Antimonide (InSb) Wafer Specifications
| Growth Method | VGF | |
| Type/Dopant | Undoped // N/S/Sn // P/Zn | |
| Diameter(mm) | 50.8 ± 0.3 | 76.2 ± 0.3 |
| Thickness(um) | 500 ± 25 | 650 ± 25 |
| OF(mm) | 16 ± 2 | 22 ± 2 |
| IF(mm) | 8 ± 2 | 12 ± 2 |
| Orientation | <100> | |
| TTV(um) | ≤10 | ≤15 |
| Bow(um) | ≤15 | ≤15 |
| Wrap(um) | ≤15 | ≤15 |
| Surface | Polished/Etched | |
| Epi-ready | Yes | |
Indium Arsenide (InAs) Wafer Specifications
| Growth Method | VGF | ||
| Type/Dopant | Undoped // N/S/Sn // P/Zn | ||
| Diameter(mm) | 50.8 ± 0.3 | 76.2 ± 0.3 | 100 ± 0.3 |
| Thickness(um) | 500 ± 25 | 600 ± 25 | 800 ± 25 |
| OF(mm) | 16 ± 2 | 22 ± 2 | 32.5 ± 2 |
| IF(mm) | 8 ± 2 | 12 ± 2 | 18 ± 2 |
| Orientation | <100> // <111> | ||
| TTV(um) | ≤10 | ≤10 | ≤15 |
| Bow(um) | ≤10 | ≤10 | ≤15 |
| Wrap(um) | ≤15 | ≤15 | ≤15 |
| Surface | Polished/Etched | ||
| Epi-ready | Yes | ||
Gallium Nitride (GaN) Wafer Specifications
| Growth Method | HVPE | ||
| Conduct Type | Semi-Insulating | N | N |
| Type/Dopant | Fe | Ge | Undoped |
| Size | 10×10.5mm // 100.5 ± mm | ||
| OF location/length | <1-100> ± 0.5° // 32.0 ± 1.0mm | ||
| IF location/length | <11-20> ± 3° // 18.0 ± 1.0mm | ||
| Orientation | C-plane<0001> off angle toward M-Axis 0.35° ± 0.15mm | ||
| Resistivity(300k) | ≧1E6 ohm-cm <0.05ohm.cm <0.5ohm.cm | ||
| EPD | (1 ~ 9)E5/cm2 5E5 ~ 3E6/cm2 (1 ~ 3)E6/cm2 | ||
| Ra(nm) | Frount surface Ra ≤0.2nm | ||
| TTV(um) | ≤ 15 | ||
| Bow(um) | ≤ 20 | ||
| Wrap(um) | ≤ 20 | ||
| Epi-ready | Yes | ||